| PART |
Description |
Maker |
| AD5255BRU250-RL7 AD5255 AD5255BRU25 AD5255BRU250 A |
3-Channel, Dual 512 and Single 128 Position Digital Potentiometer with Nonvolatile Memory
3-Channel Digital Potentiometer with Nonvolatile Memory
|
AD[Analog Devices]
|
| FM1008-200DC FM1008-200SC FM1008-200PC FMX1308-200 |
1024-16384-bit nonvolatile static RAM family
1024-16384-bit nonvlatile static ram family
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Ramtron International Corp.
Ramtron International, Corp.
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
| SDA3526 |
Nonvolatile Memory 2K-Bit EPROM
|
Siemens
|
| AD5291BRUZ-20-RL7 AD5291BRUZ-21 AD5291 AD5292 AD52 |
256-/1024-Position, DigiPOT Potentiometers with Maximum ±1% R-Tolerance Error and 20-TP Memory
256-/1024-Position, DigiPOT Potentiometers with Maximum 隆戮1% R-Tolerance Error and 20-TP Memory
|
Analog Devices
|
| HM472114-3 HM472114-4 HM472114P-3 |
1024-wordX4-bit Static Random Access Memory
|
Hitachi Semiconductor
|
| HM472114 HM472114P-4 HM472114-3 HM472114P-3 HM4721 |
1024-wordX4-bit Static Random Access Memory
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| AD5232BRU100-REEL7 AD5232BRU10-REEL7 AD5232BRU50-R |
8-Bit Dual Nonvolatile Memory Digital Potentiometer DUAL 100K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO16
8-Bit Dual Nonvolatile Memory Digital Potentiometer DUAL 50K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO16
8-Bit Dual Nonvolatile Memory Digital Potentiometer
|
ANALOG DEVICES INC
Analog Devices, Inc.
|
| S70GL01GN00 S70GL01GN0007 |
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit垄芒 Process Technology
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit?/a> Process Technology
|
SPANSION
|
| MBM2212-20 MBM2212-25 |
(MBM2212-xx) MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY
|
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
